Publications

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Below is a complete list of our publications, organized by year.
† equal contribution

2026

60. Threshold Voltage Control in InO_x Thin Film Transistors Determined by Different Work Function of Gate Metals

Chang Niu, Linjia Long, Jian-Yu Lin, and Peide D. Ye

IEEE Transactions on Electron Devices, 2026. 🔗DOI

59. Monolithic 3D integration of atomic-layer-deposited oxide semiconductors on 200-mm silicon wafers

Chang Niu, Linjia Long, Luqi Zheng, Shuting Du, Jian-Yu Lin, Kisoo Nam, Zehao Lin, Chang Liu, Juanjuan Lu, Haiyan Wang, Haitong Li, and Peide D. Ye

Nature Nanotechnology, 2026. 🔗DOI

58. Device–Circuit–System Co-Design of Reconfigurable Oxide-Semiconductor 2T Non-Volatile Gain-Cell Memory and Sandwich-3D LLM Accelerator

Luqi Zheng, Chang Niu, Shuting Du, Sumi Lee, Amir Massah Bavani, Zehao Lin, Peide D. Ye, and Haitong Li

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2026. 🔗DOI
57. Polar Unidirectional Magnetotransport in p-Type Tellurene from Quantum Geometry

Claudio Iacovelli, Pierpaolo Fontana, Victor Velasco, Chang Niu, Peide D Ye, Marcus VO Moutinho, Caio Lewenkopf, and Marcello B Silva Neto

Physical Review B, 114, 165402, 2026. 🔗DOI
56. Direct In-Device Band-Tail DOS Mapping of OS TFTs Using Electric-Field-Penetration Technique

Kisoo Nam †, Chang Niu †, Aravindh Shankar, Jian-Yu Lin, Sanjeev Khare, Sumi Lee, Pramey Upadhyaya, Peide D. Ye

IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2026. 🔗DOI

55. Breaking V_T–R_C Trade-Off in InGaZnO FETs with Ultra-Scaled Contact Length Through Ti-Seeded Contacts

Jian-Yu Lin, Sumi Lee, Zehao Lin, Chang Niu, Chang Liu, Juanjuan Lu, Kisoo Nam, Jeongwoo Park, Wonsok Lee, Min Hee Cho, Pilsang Yun, Daewon Ha, Haiyan Wang, Peide D. Ye

IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2026. 🔗DOI

54. Size-Dependent Band-Tail Localization in Oxide Semiconductors Revealed by Direct Density-of-States Mapping

Chang Niu, Kisoo Nam, Aravindh Shankar, Jian-Yu Lin, Sanjeev Khare, Sumi Lee, Pramey Upadhyaya, Peide D. Ye

arXiv, arXiv:2608.09283, 2026. 🔗DOI

53. Terahertz Field-Driven Nonlinear Hall Effect and Other Second Order Transport Phenomena in Two-Dimensional Tellurene

M. D. Moldavskaya, L. E. Golub, E. Mönch, Chang Niu, Peide D. Ye, J. Wunderlich, S. D. Ganichev

arXiv, arXiv:2607.09256, 2026. 🔗DOI
52. A Unified Mechanism for Strain-and Anneal-Induced Oxygen-Vacancy Behavior in Oxide Semiconductors

Hyeongjun Jang, Yoonju Park, Beomjin Park, Taehyun Kim, Jungho Lee, Jian-Yu Lin, Chang Niu, Peide D. Ye, Ho-Hyun Nahm, and Changwook Jeong

Chemistry of Materials, 38(12), 6050-6058, 2026. 🔗DOI
51. Surface Lone-Pair Polarization Probed by Quantum-Geometric Transport in Tellurium

Nathanael N. Batista, Wendel S. Paz, Manuel Suárez-Rodríguez, Pierpaolo Fontana, Victor Velasco, Marcus V. O. Moutinho, Chang Niu, et al.

arXiv, arXiv:2605.31197, 2026. 🔗DOI
50. Gate-Tunable Giant Negative Magnetoresistance in Tellurene Driven by Quantum Geometry

Marcello B. Silva Neto †, Chang Niu †, Marcus V.O. Moutinho, Pierpaolo Fontana, Claudio Iacovelli, Victor Velasco, Caio Lewenkopf, and Peide D. Ye

Nature Communications, 17, Article number: 5783, 2026. 🔗DOI
49. In Situ Study of the Ferroelectric–Antiferroelectric Phase Transition in Hf_1–xZr_xO₂ at Elevated Temperatures up to 600 °C

Kisoo Nam, Zehao Lin, Tae Ryong Kim, Chang Niu, et al.

Nano Letters, 26(19), 6386-6393, 2026. 🔗DOI
48. Record-Performance In₂O₃ FETs with Ultra-scaled Contacted Gate Pitch: Enabled by Higher-k HZO Linear Dielectric and Novel Ti Seed Contact

Jian-Yu Lin, Zehao Lin, Chang Niu, Chang Liu, Juanjuan Lu, Kisoo Nam, Haiyan Wang, and Peide D. Ye

2026 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Honolulu, HI, USA, 2026. 🔗DOI
47. Characteristic Low-Frequency (1/f) Noise Determined by Quantum Confinement in Atomically-Thin Atomic-Layer-Deposited In₂O₃ TFTs

Sumi Lee, Jian-Yu Lin, Chang Niu, Chun-An Shih, Linjia Long, Muhammad A. Alam, and Peide D. Ye

2026 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Honolulu, HI, USA, 2026. 🔗DOI
46. Fast, Optics-Free Extraction of Interface Trap and Subgap DOS in Amorphous Oxide TFTs Using Single Pulse Charge Pumping

Chun-An Shih, Mir Md Fahimul Islam, Chang Niu, Hyeongjun Jang, Sumi Lee, In Huh, Changwook Jeong, Peide D Ye, Muhammad A Alam

IEEE International Reliability Physics Symposium (IRPS), Tucson, AZ, USA, 2026. 🔗DOI
45. Seed Layer Engineering for Effective Charge Transfer Doping of MoS₂ Transistors

Sahej Sharma, Shao-Heng Yang, Himani Jawa, Rana Yuvraj, Bach Nguyen, Chang Niu, et al.

ACS Nano, 20(31), 22033-22042, 2026. 🔗DOI
44. Breakdown of Ohm's Law by Disorders in Low-Dimensional Transistors

Chang Niu, Adam Charnas, Jian-Yu Lin, Linjia Long, Zehao Lin, Zhuocheng Zhang, and Peide D. Ye

Nano Letters, 26(14), 4839-4846, 2026. 🔗DOI
43. Non-reciprocal Magnetoresistances in Chiral Tellurium

Shuchen Li, Chang Niu, Peide D. Ye, and Axel Hoffmann

Journal of Applied Physics, 139, 063905, 2026. 🔗DOI
42. Circular Ratchet Currents in Two Dimensional Tellurene with an Asymmetric Grating

M. D. Moldavskaya, L. E. Golub, Chang Niu, Peide D. Ye, and S. D. Ganichev

Communications Physics, 9, Article number: 262, 2026. 🔗DOI
41. Characterization of Thermal Stability and Unexpected Mobility Enhancement in IGZO FETs Measured up to 750°C

Kisoo Nam †, Chang Niu †, Hyeongjun Jang, Beomjin Park, Yoonju Park, Youngjoon Lee, Muhammad A. Alam, Changwook Jeong, and Peide D. Ye

IEEE Electron Device Letters, vol. 47, no. 3, pp. 542-545, 2026. 🔗DOI
40. Contact Length Scaling in In₂O₃ and InGaZnO FETs: Critical Roles of Quantum Confinement and Indium Concentration Tuning

Jian-Yu Lin, Chang Niu, Zehao Lin, Sumi Lee, Chang Liu, Juanjuan Lu, Haiyan Wang, and Peide D. Ye

IEEE Transactions on Electron Devices, vol. 73, no. 2, pp. 845-851, 2026. 🔗DOI

2025

39. Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

Peng Deng, Peng Zhang, Gang Qiu, Ting-Hsun Yang, Chang Niu, Yaochen Li, Wenqiang Cui, Yang Feng, Peide D. Ye, Ke He, Kai Chang, and Kang L. Wang

Advanced Materials, e18012, 2025. 🔗DOI
38. Universality of Subthreshold Slope and Defect Characterization in Thin Body Transistors

Mir Md Fahimul Islam, Chun-An Shih, Sumi Lee, Jian-Yu Lin, Zehao Lin, Chang Niu, Minji Hong, Daewon Ha, Peide D. Ye, and Muhammad A. Alam

IEEE Electron Device Letters, vol. 47, no. 2, pp. 379-382, 2025. 🔗DOI
37. Quantum Geometry and The Electric Magnetochiral Anisotropy in Noncentrosymmetric Polar Media

Pierpaolo Fontana, Victor Velasco, Chang Niu, Peide D. Ye, Pedro V. Lopes, Kaio E. M. de Souza, Marcus V. O. Moutinho, Caio Lewenkopf, and Marcello B. Silva Neto

Physical Review Letters, 135, 106602, 2025. 🔗DOI
36. Distinguishing the Different V_th Shift Mechanisms in In₂O₃ TFTs Using Ultrafast On-the-Fly Reliability Measurements

Chien-Hung Yeh †, Chang Niu †, Jian-Yu Lin, Zehao Lin, Chang Liu, Juanjuan Lu, Sumi Lee, Haiyan Wang, Ting-Chang Chang, and Peide D. Ye

IEEE Electron Device Letters, vol. 46, no. 11, pp. 2062-2065, 2025. 🔗DOI
35. Interplay of Orbital and Spin Magnetization in Trigonal Tellurium

Zhenqi Hua †, Chang Niu †, Sandeep Joy †, Pukun Tan, Gang Shi, Haoyang Liu, Jiaxing Guo, David Graf, Peide D. Ye, Cyprian Lewandowski, and Peng Xiong

arXiv, arXiv:2507.14292, 2025. 🔗DOI
34. Critical Role of Quantum Confinement on Transfer Length in Achieving High-Performance In₂O₃ Transistors with Ultra-Scaled Contacted Gate Pitch

Jian-Yu Lin, Chang Niu, Zehao Lin, Chang Liu, Juanjuan Lu, Haiyan Wang, and Peide D. Ye

2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, 2025. 🔗DOI
33. Lithography-Defined Semiconductor Moirés with Anomalous In-Gap Quantum Hall States

Wei Pan, D. Bruce Burckel, Catalin D. Spataru, Keshab R. Sapkota, Aaron J. Muhowski, Samuel D. Hawkins, John F. Klem, Layla S. Smith, Doyle A. Temple, Zachery A. Enderson, Zhigang Jiang, Komalavalli Thirunavukkuarasu, Li Xiang, Mykhaylo Ozerov, Dmitry Smirnov, Chang Niu, Peide D. Ye, Praveen Pai, Fan Zhang

Nano Letters, 25, 26, 10536–10543, 2025. (Cover, July 2, 2025) 🔗DOI
32. Analyzing the Contact-Doping Effect in In₂O₃ FETs: Unveiling the Mechanisms Behind the Threshold-Voltage Roll-Off in Oxide Semiconductor Transistors

Jian-Yu Lin, Chang Niu, Zehao Lin, Sumi Lee, Taehyun Kim, Jungho Lee, Chang Liu, Juanjuan Lu, Haiyan Wang, Muhammad Ashraful Alam, Changwook Jeong, and Peide D. Ye

IEEE Transactions on Electron Devices, vol. 72, no. 6, pp. 3004-3011, 2025. 🔗DOI
31. Ultralow Voltage Operation of p‐and n‐FETs Enabled by Self‐Formed Gate Dielectric and Metal Contacts on 2D Tellurium

Chang Niu, Linjia Long, Yizhi Zhang, Zehao Lin, Pukun Tan, Jian‐Yu Lin, Wenzhuo Wu, Haiyan Wang, and Peide D. Ye

Advanced Materials, vol. 37, no. 20, 2418142, 2025. 🔗DOI
30. Comprehensive Study of Low-Frequency Noise Origins in Scaled Atomic-Layer-Deposited IGZO TFTs

Sumi Lee, Chang Niu, Chun-An Shih, Jian-Yu Lin, Zhuocheng Zhang, Yizhi Zhang, Linjia Long, Haiyan Wang, Muhammad A Alam, and Peide D. Ye

IEEE Transactions on Electron Devices, vol. 72, no. 6, pp. 2993-2999, 2025. 🔗DOI
29. Quantification of Contact-Doping Effect in Ultrathin In₂O₃ Transistors

Jian-Yu Lin, Chang Niu, Zehao Lin, and Peide D. Ye

International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), Hsinchu, Taiwan, 2025. 🔗DOI
28. Analytical Modeling of Short-Channel Effects in BEOL-Compatible Thin-Film Transistors

Nilesh Pandey, Ujwal Radhakrishna, Jian-Yu Lin, Chang Niu, Orlando Lazaro, Gianluca Boselli, Luigi Colombo, Baher Haroun, Peide D. Ye, Leonard F Register, and Sanjay K. Banerjee

IEEE Transactions on Electron Devices, vol. 72, no. 5, pp. 2381-2389, 2025. 🔗DOI

2024

27. Terahertz Radiation Driven Nonlinear Transport Phenomena in Two-Dimensional Tellurene

E. Mönch, M. D. Moldavskaya, L. E. Golub, V. V. Bel’kov, J. Wunderlich, D. Weiss, J. V. Gumenjuk-Sichevska, Chang Niu, Peide D. Ye, and S. D. Ganichev

Nano Letters, 25, 1, 476–482, 2024. 🔗DOI
26. Quantum Confinement Controlled Positive to Negative Schottky Barrier Conversion in Ultrathin In₂O₃ Transistor Contacts

Jian-Yu Lin †, Chang Niu †, Zehao Lin, Taehyun Kim, Beomjin Park, Hyeongjun Jang, Changwook Jeong, and Peide D. Ye

IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2024. 🔗DOI
25. First Demonstration of BEOL Wafer-Scale All-ALD Channel CFETs using IGZO and Te for Monolithic 3D Integration

Chang Niu, Pukun Tan, Jian-Yu Lin, Linjia Long, Zehao Lin, Yizhi Zhang, Haiyan Wang, Glen D. Wilk, and Peide D. Ye

IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2024. 🔗DOI
24. Highly Robust All-Oxide Transistors Toward Vertical Logic and Memory

Zehao Lin, Zhuocheng Zhang, Chang Niu, Hongyi Dou, Ke Xu, Mir Md Fahimul Islam, Jian-Yu Lin, Changhyuck Sung, Minji Hong, Daewon Ha, Haiyan Wang, Muhammad Ashraful Alam, and Peide D. Ye

IEEE Transactions on Electron Devices, vol. 71, no. 12, pp. 7984-7991, 2024. (Invited) 🔗DOI
23. Wafer-Scale Atomic Layer-Deposited TeO_x/Te Heterostructure P-Type Thin-Film Transistors

Pukun Tan †, Chang Niu †, Zehao Lin, Jian-Yu Lin, Linjia Long, Yizhi Zhang, Glen Wilk, Haiyan Wang, and Peide D. Ye

Nano Letters, 24, 40, 12433–12441, 2024. 🔗DOI
22. First Demonstration of Top-Gate Enhancement-Mode ALD In₂O₃ FETs with High Thermal Budget of 600 °C for DRAM Applications

Jian-Yu Lin, Zhuocheng Zhang, Zehao Lin, Chang Niu, Yizhi Zhang, Yifan Zhang, Taehyun Kim, H. Jang, C. Sung, M. Hong, S. M. Lee, T. Lee, M. H. Cho, D. Ha, Changwook Jeong, Haiyan Wang, M. A. Alam, and Peide D. Ye

IEEE Electron Device Letters, vol. 45, no. 10, pp. 1851-1854, 2024. 🔗DOI
21. Enhancement of In₂O₃ Field-Effect Mobility Up To 152 cm².V^-1·s^-1 Using HZO-Based Higher-k Linear Dielectric

Zehao Lin, Chang Niu, Hyeongjun Jang, Taehyun Kim, Yizhi Zhang, Haiyan Wang, Changwook Jeong, and Peide D. Ye
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Honolulu, HI, USA, 2024. 🔗DOI
20. Highly Robust All-Oxide Transistors with Ultrathin In₂O₃ as Channel and Thick In₂O₃ as Metal Gate Towards Vertical Logic and Memory

Zehao Lin, Zhuocheng Zhang, Chang Niu, Hongyi Dou, K. Xu, M. Islam, J.-Y. Lin, C. Sung, M. Hong, D. Ha, H. Wang, M. A. Alam, and Peide D. Ye
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Honolulu, HI, USA, 2024. 🔗DOI
19. Positive to Negative Schottky Barrier Transition in Metal/Oxide Semiconductor Contacts by Tuning Indium Concentration in IGZO

Sumi Lee †, Chang Niu †, Yizhi Zhang, Haiyan Wang, and Peide D. Ye
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Honolulu, HI, USA, 2024. 🔗DOI
18. Superconducting Field-Effect Transistors with Pd_xTe–Te Intimate Contacts

Chang Niu, Mingyi Wang, Zhuocheng Zhang, Gang Qiu, Yixiu Wang, Dongqi Zheng, Pai-Ying Liao, Wenzhuo Wu, and Peide D. Ye
ACS Nano, 18, 23, 15107–15113, 2024. 🔗DOI
17. Optically Gated Electrostatic Field-Effect Thermal Transistor

Shouyuan Huang, Neil Ghosh, Chang Niu, Yong P. Chen, Peide D. Ye, and Xianfan Xu
Nano Letters, 24, 17, 5139–5145, 2024. 🔗DOI
16. Topological and Quantum Transport in Chiral Two-Dimensional Tellurium

Chang Niu
Purdue University Graduate School, 2024. 🔗DOI
15. Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In₂O₃ Thin-Film Transistors

Chang Niu, Zehao Lin, Vahid Askarpour, Zhuocheng Zhang, Pukun Tan, Mengwei Si, Zhongxia Shang, Yizhi Zhang, Haiyan Wang, Mark S. Lundstrom, Jesse Maassen, and Peide D. Ye
IEEE Transactions on Electron Devices, vol. 71, no. 5, pp. 3403-3410, 2024. (Invited) 🔗DOI

2023

14. First Determination of Thermal Resistance and Thermal Capacitance of Atomic-Layer-Deposited In₂O₃ Transistors

Jian-Yu Lin, Zhuocheng Zhang, S. Alajlouni, Pai-Ying Liao, Zehao Lin, Chang Niu, A. Shakouri, and Peide D. Ye
International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2023. 🔗DOI
13. Record-Low Metal to Semiconductor Contact Resistance in Atomic-Layer-Deposited In₂O₃ TFTs Reaching the Quantum Limit

Chang Niu, Zehao Lin, Zhuocheng Zhang, Pukun Tan, Mengwei Si, Zhongxia Shang, Yizhi Zhang, Haiyan Wang, and Peide D. Ye
International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2023. (Best Paper Award) 🔗DOI
12. High-Pressure Induced Weyl Semimetal Phase in 2D Tellurium

Chang Niu, Zhuocheng Zhang, David Graf, Seungjun Lee, Mingyi Wang, Wenzhuo Wu, Tony Low, and Peide D. Ye
Communications Physics, 6, Article number: 345, 2023. 🔗DOI
11. Tunable Chirality-Dependent Nonlinear Electrical Responses in 2D Tellurium

Chang Niu, Gang Qiu, Yixiu Wang, Pukun Tan, Mingyi Wang, Jie Jian, Haiyan Wang, Wenzhuo Wu, and Peide D. Ye
Nano letters, 23, 18, 8445–8453, 2023. 🔗DOI
10. Ultrahigh Bias Stability of ALD In₂O₃ FETs Enabled by High Temperature O₂ Annealing

Zhuocheng Zhang, Zehao Lin, Chang Niu, Mengwei Si, Muhammad A Alam, and Peide D. Ye
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, 2023. 🔗DOI
9. Tunable Circular Photogalvanic and Photovoltaic Effect in 2D Tellurium with Different Chirality

Chang Niu, Shouyuan Huang, Neil Ghosh, Pukun Tan, Mingyi Wang, Wenzhuo Wu, Xianfan Xu, and Peide D. Ye
Nano letters, 23, 8, 3599–3606, 2023. 🔗DOI

2022 and earlier

8. Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

Zehao Lin, Mengwei Si, Vahid Askarpour, Chang Niu, Adam Charnas, Zhongxia Shang, Yizhi Zhang, Yaoqiao Hu, Zhuocheng Zhang, Pai-Ying Liao, Kyeongjae Cho, Haiyan Wang, Mark Lundstrom, Jesse Maassen, and Peide D. Ye
ACS nano, 16, 12, 21536–21545, 2022. 🔗DOI
7. The Resurrection of Tellurium as an Elemental Two-Dimensional Semiconductor

Gang Qiu, Adam Charnas, Chang Niu, Yixiu Wang, Wenzhuo Wu, and Peide D. Ye
npj 2D Materials and Applications, 6, Article number: 17, 2022. 🔗DOI
6. Bilayer Quantum Hall States in an N-type Wide Tellurium Quantum Well

Chang Niu, Gang Qiu, Yixiu Wang, Mengwei Si, Wenzhuo Wu, and Peide D. Ye
Nano letters, 21, 18, 7527–7533, 2021. 🔗DOI
5. BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2D Electron Gas Over 0.8 × 10¹⁴/cm² at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

Mengwei Si, Anna Murray, Zehao Lin, Joseph Andler, Junkang Li, Jinhyun Noh, Sami Alajlouni, Chang Niu, Xiao Lyu, Dongqi Zheng, Kerry Maize, Ali Shakouri, Suman Datta, Rakesh Agrawal, and Peide D. Ye
IEEE Transactions on Electron Devices, vol. 68, no. 7, pp. 3195-3199, 2021. 🔗DOI
4. Indium–Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

Mengwei Si, Joseph Andler, Xiao Lyu, Chang Niu, Suman Datta, Rakesh Agrawal, and Peide D. Ye
ACS nano, 14, 9, 11542–11547, 2020. 🔗DOI
3. Quantum Hall Effect of Weyl Fermions in N-Type Semiconducting Tellurene

Gang Qiu, Chang Niu, Yixiu Wang, Mengwei Si, Zhuocheng Zhang, Wenzhuo Wu, and Peide D. Ye
Nature Nanotechnology, 15, 585–591, 2020. 🔗DOI
2. Gate-Tunable Strong Spin-Orbit Interaction in Two-Dimensional Tellurium Probed by Weak Antilocalization

Chang Niu, Gang Qiu, Yixiu Wang, Zhuocheng Zhang, Mengwei Si, Wenzhuo Wu, and Peide D. Ye
Physical Review B, 101, 205414, 2020. 🔗DOI
1. A Ferroelectric Semiconductor Field-Effect Transistor

Mengwei Si, Atanu K Saha, Shengjie Gao, Gang Qiu, Jingkai Qin, Yuqin Duan, Jie Jian, Chang Niu, Haiyan Wang, Wenzhuo Wu, Sumeet K Gupta, and Peide D. Ye
Nature Electronics, 2, 580–586, 2019. 🔗DOI